Flow
- Bosch DRIE
- 130 cyc
- SACVD liner
- 300 nm
- ALD TaN
- 10 nm
- iPVD Cu seed
- 793 nm
- Cu ECP
- bottom-up
Snapshot
- ECP time
- 14.3 min
- Fill front
- 21.0 µm
Physics-based, AI-assisted process modeling. Predict profiles, calibrate to your fab, and screen for systematic defect hotspots.
Adjust each step of your process flow to match your fab, then simulate it. See which parts of your layout and process will cause systematic defects before you run a wafer.
Simulate every step of your process flow. Physics-based models return the full profile for each recipe, fast enough to explore the whole process window.
Make it specific to your fab. Fit the models to your tools, chemistries and recipes with measured cross-sections, so rates, sidewall coverage and undercut match what you see.
Find systematic defect hotspots before silicon exists. Scan a layout for failures that come from process, pattern, their interaction, and process and overlay variation.
Each model is built on the physics of the step, and its knobs are the ones you turn at the tool. More modules are in development, and we add new ones around customer needs.
PVD, CVD (LPCVD, PECVD, HDP), ALD, thermal oxidation, evaporation and electroplating. Line-of-sight and surface transport, plasma and ion effects, bath kinetics.
Spin coat, dry resist, dry-film lamination, expose, bake, develop, clean-up and lift-off. Aerial image, bleaching and standing waves, post-exposure diffusion, dissolution.
RIE, DRIE, wet (KOH, TMAH, BOE), isotropic and vapor (XeF2, HF), selective etch and release. Ion and neutral transport, passivation, selectivity, crystal planes.
Metal, dielectric, silicon and barrier polish across slurry and pad conditions, with line-width and pattern-density dependence, and the post-CMP clean.
Hybrid (dielectric fusion with Cu-Cu), fusion, thermocompression, eutectic and anodic bonding, with the interface physics that decides void formation.
Anneal, diffusion and implant, with the thermal budget tracked across the whole flow.
Yes. Fill out the Request a demo form and we will get back to you with the next steps.
No, you do not have to. The built-in physics models work out of the box, so you can simulate without sharing anything. To calibrate to your fab, use the on-prem version and calibrate on your own machines, so your private data never goes to an outside party.
The models are built from published literature and first-principles physics of plasma, surface chemistry, transport, optics and contact mechanics, covering etch, deposition, lithography, CMP, bonding and thermal processing. They have been validated on real fab data by our fab partners.
Full TCAD and 3D virtual fabrication are broad and heavy. fab Studio is fast and focused: physics-based simulation of each process step, calibrated to your own fab and tools, plus screening of your layout for systematic defects. You run fewer test wafers and iterate in software, which saves time and cost.