Canyon sound

See the cross-section before you cut the wafer.

Physics-based, AI-assisted process modeling. Predict profiles, calibrate to your fab, and screen for systematic defect hotspots.

Simulate your process flow, tuned to your fab.

Adjust each step of your process flow to match your fab, then simulate it. See which parts of your layout and process will cause systematic defects before you run a wafer.

Run: via-middle Cu TSV, 5 × 53 µmExample output

Flow

Bosch DRIE
130 cyc
SACVD liner
300 nm
ALD TaN
10 nm
iPVD Cu seed
793 nm
Cu ECP
bottom-up

Snapshot

ECP time
14.3 min
Fill front
21.0 µm
Depth52.5 µm
Aspect ratio10 : 1
Seed, 90% depth20 nm

Predict

Simulate every step of your process flow. Physics-based models return the full profile for each recipe, fast enough to explore the whole process window.

  • Deposition: PVD, CVD (LPCVD, PECVD, HDP), ALD, thermal oxidation, evaporation, electroplating
  • Lithography: spin coat, dry resist, dry-film lamination, expose, bake, develop, clean-up and lift-off
  • Etch: RIE, DRIE, wet (KOH, TMAH, BOE), isotropic and vapor (XeF2, HF), selective etch and release
  • CMP and post-CMP clean
  • Bonding: hybrid (dielectric fusion with Cu-Cu), fusion, thermocompression, eutectic, anodic
  • Thermal and doping: anneal, diffusion, implant
Calibration: Bosch via profile vs. SEMExample output

Fitted parameters

Sticking coeff.
0.09
Passivation yield
0.61
Ion spread
4.8°

Residual, RMS

Before fit
0.58 µm
After fit
0.08 µm

Floor depth error

Before fit
+3.6 µm
After fit
+0.1 µm

Data

SEM edge points
128
Residual, RMS0.08 µm
Cross-sections4
FitConverged

Calibrate

Make it specific to your fab. Fit the models to your tools, chemistries and recipes with measured cross-sections, so rates, sidewall coverage and undercut match what you see.

  • Fit from a few cross-sections
  • Parameters stay physical and inspectable
  • Residuals reported against your data
Hotspot scan: layout tile 4 mm × 4 mmExample output

Ranked by risk

  • H-01 pad jog, 0.320.91
  • H-02 line tips, 0.450.64
  • H-03 dense, 0.500.47

Check

Fill
PECVD oxide
Metal height
0.8 µm
Safe space
≥ 0.55 µm

Top cause

H-01
Keyhole void
H-02
Void at tips
H-03
Seam
Tiles screened3,600
Flagged3
Re-checked3 of 3

Screen

Find systematic defect hotspots before silicon exists. Scan a layout for failures that come from process, pattern, their interaction, and process and overlay variation.

  • Fast screening across the whole design
  • High-accuracy checks on what it flags
  • Ranked by risk, traced to cause
Run: via-middle Cu TSV, 5 × 53 µmExample output

Flow

Bosch DRIE
130 cyc
SACVD liner
300 nm
ALD TaN
10 nm
iPVD Cu seed
793 nm
Cu ECP
bottom-up

Snapshot

ECP time
14.3 min
Fill front
21.0 µm
Depth52.5 µm
Aspect ratio10 : 1
Seed, 90% depth20 nm
Calibration: Bosch via profile vs. SEMExample output

Fitted parameters

Sticking coeff.
0.09
Passivation yield
0.61
Ion spread
4.8°

Residual, RMS

Before fit
0.58 µm
After fit
0.08 µm

Floor depth error

Before fit
+3.6 µm
After fit
+0.1 µm

Data

SEM edge points
128
Residual, RMS0.08 µm
Cross-sections4
FitConverged
Hotspot scan: layout tile 4 mm × 4 mmExample output

Ranked by risk

  • H-01 pad jog, 0.320.91
  • H-02 line tips, 0.450.64
  • H-03 dense, 0.500.47

Check

Fill
PECVD oxide
Metal height
0.8 µm
Safe space
≥ 0.55 µm

Top cause

H-01
Keyhole void
H-02
Void at tips
H-03
Seam
Tiles screened3,600
Flagged3
Re-checked3 of 3

Process models.

Each model is built on the physics of the step, and its knobs are the ones you turn at the tool. More modules are in development, and we add new ones around customer needs.

ModulePhysics modeledOutputs

Deposition

PVD, CVD (LPCVD, PECVD, HDP), ALD, thermal oxidation, evaporation and electroplating. Line-of-sight and surface transport, plasma and ion effects, bath kinetics.

Full profile, thickness, coverage
Overhang, pinch-off, bread-loafing, keyholes, seams, voids, bird’s beak, film stress

Lithography

Spin coat, dry resist, dry-film lamination, expose, bake, develop, clean-up and lift-off. Aerial image, bleaching and standing waves, post-exposure diffusion, dissolution.

Full resist profile, thickness, sidewall angle
Standing waves, undercut, footing, scum, reflow, lamination voids, lift-off profile

Etch

RIE, DRIE, wet (KOH, TMAH, BOE), isotropic and vapor (XeF2, HF), selective etch and release. Ion and neutral transport, passivation, selectivity, crystal planes.

Full profile, depth, sidewall angle, undercut
Lag, bowing, footing, notching, scalloping, microtrenching, mask erosion

CMP

Metal, dielectric, silicon and barrier polish across slurry and pad conditions, with line-width and pattern-density dependence, and the post-CMP clean.

Post-polish topography, residual thickness
Dishing, erosion, clean residue

Bonding

Hybrid (dielectric fusion with Cu-Cu), fusion, thermocompression, eutectic and anodic bonding, with the interface physics that decides void formation.

Bond-interface geometry, what actually joined
Voids, bubbles, Cu-Cu contact, overlay effects, electromigration life

Thermal and doping

Anneal, diffusion and implant, with the thermal budget tracked across the whole flow.

Dopant and junction profile, sheet resistance
Activation, drive-in, stress relief, etch-rate change

Request a demo.

Your needs or ideal solution

We use your answers only to decide who to contact and what to build. We do not sell or share them.

Questions engineers ask first.

Can I use it today?

Yes. Fill out the Request a demo form and we will get back to you with the next steps.

Do I need to share fab data?

No, you do not have to. The built-in physics models work out of the box, so you can simulate without sharing anything. To calibrate to your fab, use the on-prem version and calibrate on your own machines, so your private data never goes to an outside party.

Where does the physics come from?

The models are built from published literature and first-principles physics of plasma, surface chemistry, transport, optics and contact mechanics, covering etch, deposition, lithography, CMP, bonding and thermal processing. They have been validated on real fab data by our fab partners.

How is this different from full TCAD or 3D virtual fabrication?

Full TCAD and 3D virtual fabrication are broad and heavy. fab Studio is fast and focused: physics-based simulation of each process step, calibrated to your own fab and tools, plus screening of your layout for systematic defects. You run fewer test wafers and iterate in software, which saves time and cost.

Process knowledge should not live in one engineer's head.